MUMBAI, India, Oct. 12 -- Intellectual Property India has published a patent application (202641119445 A) filed by National Institute Of Technology Calicut, An Indian Institute on October 06, 2026, for Spin-Coated Multilayer Pvdf Based Ferroelectric Polymer Structures For Flexible Field-Effect Transistors.
Inventors include Arjun Hari M; Lintu Rajan; and Subash Cherumannil Karumuthil.
The application for the patent was published on October 09, 2026, under issue no. 41/2026.
Abstract: ABSTRACT SPIN-COATED MULTILAYER PVDF BASED FERROELECTRIC POLYMER STRUCTURES FOR FLEXIBLE FIELD-EFFECT TRANSISTORS The present invention relates to a homo-multilayer PVDF-TrFE polymer nanocomposite sensing system integrated onto an ultra-thin flexible silicon-on-insulator (SOI) based FET. The device comprises a SOI substrate with source/drain regions, a thin gate dielectric, a Ti/Mo bottom electrode stack, a multilayer PVDF-TrFE stack with ZnO nanoparticles and a top metal electrode. The polymer composite sub-layers are sequentially deposited via spin coating with controlled variation in polymer and nanoparticle composition. The central thick functional layer is sandwiched between thinner interfacial layers. The invention further discloses a comprehensive fabrication process for multilayer assembly and integration into FFT devices. Fig. 4
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