MUMBAI, India, June 22 -- Intellectual Property India has published a patent application (202531048727 A) filed by Indian Institute Of Technology Kharagpur on May 20, 2025, for Stuffed Sulvanite-Type Chalcogenides With Low Thermal Conductivity.
Inventors include Dr. Partha Pratim Jana; Achintya Lakshan; Krishnendu Buxi; and Biplab Koley.
The application for the patent was published on June 12, 2026, under issue no. 24/2026.
Abstract: ABSTRACT Title: Stuffed sulvanite-type chalcogenides with low thermal conductivity Compositional derivatives of Cu4TiSe4 are achieved through systematic substitution at the anionic Se site and cationic Cu site, respectively. At room temperature, both Cu4TiSe4-ySy (0 = y = 2.5) and AgxCu4-xTiSe4 (x = 1) retain the cubic Cu4TiSe4 structure (space group P-43m), establishing a new stuffed sulvanites family characterized by a positionally disordered stuffed ion embedded within a sulvanite-type framework. Using single-crystal X-ray diffraction across all compositions, control over positional disorder by tuning the unit-cell volume (V) is demonstrated. A key advantage of these materials is their ultralow thermal conductivity (0.46–0.66 W m?¹ K?¹) near room temperature, which is an order of magnitude lower than pristine sulvanite compounds. The stuffed sulvanite chalcogenides cover a wide range of band gaps from 1.6?1.8 eV that is wider based on anionic substitution (S by Se) rather than cation substitution and suitable for photovoltaic applications. Fig. 2
Disclaimer: Curated by HT Syndication.
