MUMBAI, India, Nov. 2 -- Intellectual Property India has published a patent application (202641126787 A) filed by Vellore Institute Of Technology on October 24, 2026, for Variability-Aware System And Method For Selecting Nanowire Multiplicities For Multi-Nanowire Static Random-Access Memory Cell.
Inventors include Nawaz Shafi; and Tushar Dudeja.
The application for the patent was published on October 30, 2026, under issue no. 44/2026.
Abstract: Variability-aware system and method for selecting nanowire multiplicities for multi-nanowire static random-access memory cell is provided. The method includes (i) receiving, from an input source 102, SRAM design parameters, process-variation parameters, candidate nanowire multiplicities, and a total nanowire constraint by a processor of a computing server 106; (ii) performing coupled device-circuit simulations for candidate nanowire allocations under hold, read, and write conditions and determining corresponding stability margins; (iii) identifying a limiting stability condition having a lowest stability margin; (iv) performing sensitivity and variance analysis to determine variance contributions associated with respective transistor roles; (v) selecting integer nanowire multiplicities based on the limiting stability condition and the variance contributions, subject to the total nanowire constraint; (vi) evaluating the selected nanowire multiplicities to identify an allocation that maximizes a minimum stability margin; and (vii) transmitting data indicative of the identified allocation to a fabrication system 108 for fabricating the SRAM cell. FIG. 9
Disclaimer: Curated by HT Syndication.
