MUMBAI, India, July 13 -- Intellectual Property India has published a patent application (202617076322 A) filed by Advanced Micro Devices, Inc. on June 19, 2026, for Variable Burst Length For A Memory Device.
Inventors include Nygren, Aaron John; and Lepak, Kevin M..
The application for the patent was published on July 10, 2026, under issue no. 28/2026.
Abstract: A memory device selects a burst length to complete memory transactions. The memory device receives a first memory transaction and a second memory transaction. The memory device completes the first memory transaction using the first burst length. First data and metadata associated with the first memory transaction are transmitted to complete the first memory transaction. The memory device further completes the second memory transaction using a second burst length. A number of bursts in the first burst length is greater than a number of burst the second burst length.
Disclaimer: Curated by HT Syndication.
